Korean Institute of Surface Engineering

pISSN : 1225-8024 | eISSN : 3399-8403

공학

한국표면공학회지 (36권3호 234-241)

Growth of SiC Nanorods Using Fe and Hexamethyldisilabutane

Fe와 Hexamethyldisilabutane를 이용한 SiC 나노로드의 성장

노대호;김재수;변동진;양재웅;김나리;
Rho Dae-Ho;Kim Jae-Soo;Byun Dong-Jin;Yang Jae-Woong;Kim Na-Ri;

고려대학교 재료공학과;한국과학기술연구원 금속공정연구센터;대진대학교 신소재공학과;
Korea University, Department of Materials Science and Engineering;Korea Institute of Science and Technology, Metal Processing Research Center;Daijin University, Department of Advance Materials Science and Engineering;

Abstract

SiC nanorod was synthesized directly on Si substrate using hexamethyldisilabutane and Fe catalyst with (111) direction. Fe acted a liquid catalyst at growth condition. Grown SiC nanorod has about 30nm diameter and $5{mu}m$ length. SiC nanorod growth was divided by trro regions with diameter distribution. This diameter distribution were occurred by surface deposition at as - grown nanorod`s surface by limitation of growth rate. At higher temperature, these division not occurred. Growth temperature and flow rates affected diameter and morphology of nanorods. With increasing flow rate of source gas, nanorod`s diameter increased because of deactivation effect. Case of the increasing temperature, growth rate increased so deactivation did not occurred.

Keywords

SiC;Nanorod;VLS;HMDS;CVD;Fe;